Fast recovery diode

Fast recovery diode refers to a diode with a short reverse recovery time (below 5us), which often adopts gold doping measures in the process. The structure includes PN junction structure and improved PIN structure. Its forward voltage drop is higher than that of ordinary diodes (1-2V), and its reverse voltage withstand is mostly below 1200V. In terms of performance, it can be divided into two levels: fast recovery and ultra fast recovery. The former has a reverse recovery time of hundreds of nanoseconds or longer, while the latter has a recovery time of less than 100 nanoseconds.

Schottky Barrier Diode, also known as Schottky Barrier Diode, is a diode based on the potential barrier formed by the contact between metals and semiconductors. It has a forward voltage reduction (0.4-0.5V), a short reverse recovery time (10-40 nanoseconds), a large reverse leakage current, and a low withstand voltage, generally below 150V. It is commonly used in low voltage situations.

These two types of tubes are commonly used for switching power supplies.

The difference between Schottky diodes and Fast recovery diode is that the recovery time of the former is about 100 times smaller than that of the latter, while the reverse recovery time of the former is about a few nanoseconds~!

The advantages of the former include low power consumption, high current, and ultra high speed! Of course, the electrical characteristics are all diodes!

Fast recovery diode are manufactured using processes such as gold doping and simple diffusion, which can achieve high switching speed and high voltage resistance. Fast recovery diodes are mainly used as rectifier components in inverter power supplies

Schottky diode: The reverse voltage withstand value is lower than 40V-50V, the on state voltage drop is 0.3-0.6V, and the reverse recovery time is less than 10nS. It is a diode with Schottky characteristics known as a "metal semiconductor junction". Its forward starting voltage is relatively low. In addition to materials, the metal layer can also be made of materials such as gold, molybdenum, nickel, and titanium. Its semiconductor material is silicon or gallium arsenide, mostly N-type semiconductor. This device is conductive by most carriers, so its reverse Saturation current is much larger than that of PN junction conductive by a few carriers. Due to the minimal storage effect of minority carriers in Schottky diodes, their frequency response is only limited by the RC time constant, making them ideal devices for high-frequency and fast switching. Its operating frequency can reach 100GHz. Moreover, MIS (metal insulator semiconductor) Schottky diodes can be used to make solar cells or light emitting diodes.

Fast recovery diode: With a forward conduction voltage drop of 0.8-1.1V and a reverse recovery time of 35-85nS, it quickly switches between conduction and cutoff, increasing the frequency of device use and improving the waveform. Fast recovery diodes are manufactured using processes such as gold doping and simple diffusion, which can achieve high switching speed and high voltage resistance. Fast recovery diodes are mainly used as rectifier components in inverter power supplies

Usually, Fast recovery diode of 5-20A are packaged in TO-220FP plastic, high-power Fast recovery diode above 20A are packaged in TO-3P plastic with top metal heat sink, and Fast recovery diode below 5A are packaged in plastic with specifications such as DO-41, DO-15, or D0-27.