Characteristic of Fast recovery diode

Fast recovery diode, characterized by high voltage resistance and low leakage current during reverse blocking, and high current resistance in forward low-pass state. Due to its use as a switch, it is generally required to have a fast switching speed. In addition, properly selecting the characteristics of Flyback diode, especially the reverse recovery characteristics, such as reverse recovery time and reverse recovery softness, can significantly reduce the power consumption of switching devices, diodes and other circuit components, and reduce the voltage spike and electromagnetic interference caused by Flyback diode, so as to minimize or even eliminate the absorption circuit.

Generally speaking, the forward voltage drop of Fast recovery diode is small, around 0.4V, while ordinary silicon tubes are around 0.6V. To reduce losses, Fast recovery diode are used.

If the reverse breakdown voltage of the Fast recovery diode is 40V, it can quickly recover after reverse breakdown; If the reverse breakdown voltage of the Fast recovery diode is 1000V, there is no problem of reverse breakdown, so this can be ignored in DC circuits.