What are the influencing factors of diode avalanche energy/reverse surge?
What are the factors that affect avalanche energy/reverse surge when diode are working in electronic circuits?
1. The larger the grain area, the larger the Ersm;
2. The grain resistance coefficient is small (with low Vr) and the Ersm is large;
3. For surfaces with high passivation protection density, the Ersm is relatively high;
4. diode with smaller Trr, Vf, and Ersm.
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