This new type of nanosheet transistor doubles its performance! 3

Secondly, the reliability of nanosheet transistors is also a concern. Due to the very small distance between the thin films, the tunneling effect of charges may cause transistor failure. In addition, the stacked structure of nanosheet transistors also needs to address the issue of electrical connections between the individual sheets.

However, despite the challenges, nanosheet transistors are still considered one of the key technologies for future chip development. Many scientists and engineers are researching how to overcome these challenges and develop reliable and scalable manufacturing technologies for nanosheet transistors.

Conclusion

IBM's concept nanosheet transistor is a novel transistors structure with the potential to double performance. Its small size and stacked structure give it higher integration, faster switching speed, and lower power consumption. However, nanosheet transistors still face many manufacturing and reliability challenges. Nevertheless, nanosheet transistors are still considered one of the key technologies for future chip development, and many scientists and engineers are working to overcome these challenges and promote further development of nanosheet transistors.