What is an insulated gate bipolar transistor? The structure, characteristics, principles, applications, installation, and development history of insulated gate bipolar transistors 1

Insulated Gate Bipolar Transistor (IGBT) is a power electronic device that combines the advantages of various semiconductor devices and has a wide range of applications. It was first developed by Sanyo Corporation in the 1980s.

1、 Structure

The basic structure of IGBT is a four layer, three junction, PNPN type structure, which consists of a P-type substrate, an N-type buffer layer, a P-type substrate, an N-type drift layer, and an N+- type source region. Among them, the substrate layer and the buffer layer together form the emitter, the source region and the drift layer form the cathode, and the gate is located between the source region and the drift layer.  Transistor 

2、 Characteristics

1. High input impedance: IGBT has a high input impedance similar to FET, making it easier to drive.

2. Low switching loss: IGBT has lower conduction voltage drop and switching speed in the conducting state, reducing energy loss.   Transistor 

3. High power amplification: IGBT can achieve high power output and is easy to use in parallel. Transistor 

4. Poor high-frequency characteristics: Compared to ordinary MOSFETs, IGBT has weaker high-frequency characteristics.