4N150L UTC/Youshun Power Field Effect Transistor MOS 3

Date:2025-09-11 Categories:Product knowledge Hits:257 From:Guangdong Youfeng Microelectronics Co., Ltd


Electric Management Framework: LM2575 LM2576 LM2596 IL2576 IL2596 XL2596 XL2576 TD2576 TD2596

ADI Modeller:AD7705BRZ AD7705BURZ AD7706BRZ AD7706BURZ AD7715ANZ-3 AD7715ANZ-5 AD7715ARZ-3REEL AD7715ARZ-5REEL  diode

AMS 39057;21796;wake pictures: AS3933-BTST AS3933-BQFT CKS32F030C8T6 CKS32F051C8T6 CKS32F051R8T6 CKS32F103C8T6 CKS32F103R8T6

FOJAN riche25463634:Source: 36148; Electrical barrier

FOLLON Florence: Source: 36148;: 381091;: Electricity

From 20248;;  21183;,  no 35814; children, welcome to search!

MOB: 13613052514  diode

Deep 22323;[ 2] City Wife 20255;[ 3] Science has limited companies.

OWEIS ELECTRONICS Co., LIMITED.

Address: Deep 22323; Headquarters 701-703 in the southern city of Fuga.

ADD:Rm701-703, Block A, Jiahe huaqiang Bldg., Shennan zhong Rd., Futian District, Shenzhen, Guangdong, China - 518000

TEL : +86-755-82732992

FAX : +86-755-23805907

Email :

Specify 19994;, substitute 38144;, electric touch, electric power supply,  diode



Previous: Classification, Structure, and Principle of MOSFET

Next: 4N90CL UTC/Youshun Power Field Effect Transistor MOS 1

QQChat
ChatWechat
ConsultTelephone
+86-0769-82730331