China's first ZnO nanorod field-effect transistor successfully developed

Recently, the Institute of Microelectronics of the Chinese Academy of Sciences has successfully developed the first ZnO nanorod field-effect transistor in China using independently developed new technology.transistors

ZnO is a novel wide bandgap multifunctional semiconductor material. ZnO nanomaterials (nanowires, nanorods, nanobelts, nanorings, etc.) have superior properties compared to conventional bulk materials and have broad application prospects in many fields such as sensing, optics, and electronics, attracting great attention from the international academic community. At present, domestic research is focused on material growth and diode device preparation.

The research group led by researcher Zhang Haiying from the Institute of Microelectronics has independently developed a new "bottom-up" nanodevice design and preparation method using materials provided by the University of Science and Technology of China. The conventional contact optical lithography technology is used to form a metal oxide semiconductor structure field-effect transistor with ZnO nanorods as channels, gate oxygen, and back gate metal. Satisfactory device testing results have been obtained, marking the successful development of China's first back gate ZnO nanorod field-effect transistors and filling the gap in this field in China.

The successful development of field-effect transistors has opened up a new research field for new nanodevices and their applications. The research team will continue to deepen cooperation, assist in the preparation of materials with longer diameters of nanowires, further improve device processes, enhance device performance, and solve key technical problems for practical applications.