Practical Sharing | High Power Gallium Nitride Field Effect Transistor: High Performance, High Efficiency, and High Reliability 1

High power gallium nitride field-effect transistor (GaN FET) is a new type of high-performance semiconductor device with advantages such as high power, high efficiency, and high reliability. It has broad application prospects in RF and power applications. This article will introduce the working principle, characteristics, and application fields of high-power gallium nitride field-effect TPD1E05U06DPYR transistor.

1、 Working principle

High power gallium nitride field-effect transistor is an electronic device that controls the flow of current by regulating the transport of charge. It is made of gallium nitride material, which has high electron mobility and high breakdown voltage.

When a forward bias is applied, electrons are injected from the source into the channel. By adjusting the gate voltage, the flow of electrons in the channel can be controlled. When the gate voltage is higher than the electron energy level in the channel, electrons are attracted by the gate electric field, forming an electron channel through which current can flow. When the gate voltage is lower than the electron energy level in the channel, the electrons are blocked by the gate electric field, and current cannot flow through the channel.