Identification and detection of transistor 2

Date:2025-09-01 Categories:Product knowledge Hits:215 From:Guangdong Youfeng Microelectronics Co., Ltd


② Reverse saturation current/CBO between collector and base. Its essence is the reverse current when the QL4090-3PQ208C collector junction is reverse biased. /The smaller the CBO, the better the unidirectional conductivity.

③ Reverse saturation current/CEO between collector and emitter. Its essence is the reverse current when a specified reverse voltage is applied between the collector and emitter, also known as the through current. /The smaller the CEO, the better the thermal stability of the transistors.

(2) Extreme parameters.

① Maximum allowable collector current/CM.

② Collector emitter reverse breakdown voltage U (BR) CEO.

③ The maximum allowable dissipated power of the collector is P [M.

2. Identification and testing of transistors (1) Identification of transistor type and base. A transistor can be seen as two diodes for easy discrimination. Using a multimeter with a resistance range of R × 100 or R × lkfl, connect the red probe to one of the pins and the black probe to the other two pins respectively. Measure the two resistance values. If both resistance values are small, the pin connected to the red probe is the base of the PNP transistor. If one of the two resistance values is large, you can change the red probe to the other pin and try again until the resistance measured by both pins is small.transistors



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