Various classifications of crystal diodes 2

3. Alloy type diode

A PN junction is formed on a single crystal wafer of N-type germanium or silicon by alloying with metals such as indium and aluminum. Small forward voltage drop, suitable for high current rectification. Due to its high static capacitance when the PN junction is reversed, it is not suitable for high-frequency detection and rectification.

4. Diffusion type diode

Heating a single crystal of N-type germanium or silicon in a high-temperature P-type impurity gas causes a portion of the surface of the single crystal to become P-type, thus forming a PN junction. Due to the small forward voltage drop of PN junction, it is suitable for high current rectification. Recently, the mainstream use of high current rectifiers has shifted from silicon alloy type to silicon diffusion type.diode

5. Tabletop diode

The production method of PN junction is the same as that of diffusion type, but only the PN junction and its necessary parts are retained, and the unnecessary parts are corroded away with drugs. The remaining part takes on a rectangular shape, hence the name. The initial production of the tabletop was made using diffusion method on semiconductor materials. Therefore, this type of tabletop is also called a diffusion tabletop. For this type, it seems that there are few product models used for high current rectification, while there are many product models used for low current switches.diode