Main parameters of transistor 2

2) The maximum allowable dissipation power P (CM) of the collector electrode. When the transistor is working, the collector electrode needs to dissipate a certain amount of power, which causes the collector junction to heat up. When the temperature is too high, it can lead to changes in parameters and even burn out the transistor. The maximum dissipated power of the collector is defined as the power consumed when the collector temperature of a transistor rises to a level that does not burn out the collector. To increase the P (CM) value during use, heat sinks can be added to high-power tubes, and the larger the heat sink, the more the P (CM) value will increase.

3) The reverse breakdown voltage BU (CEO) of the collector emitter electrode is the maximum voltage allowed to be applied between the collector and emitter electrodes when the base is open. In practical applications, the voltage applied between the collector and emitter must be less than BU (CEO), otherwise it will damage the transistor.

(3) Current amplification factor.

1) DC amplification factor β "or expressed as h (FE). It refers to the ratio of the collector output DC I (B) to the base input DC in a common emitter circuit when there is no AC signal.transistor

Namely, β=I (c)/I (B) β is an important parameter for measuring the current amplification capability of a transistor, but for the same transistor, there are different β values at different collector currents

2) The amplification factor β for communication can also be expressed as h (FE); express. This parameter refers to the ratio of the change in collector current △ AIc to the change in base current △ I (B) in a common emitter circuit when an AC signal is input.