Discrimination of polarity and quality of transistor pins 5

(6) Detection of high-power semiconductor transistors

The method of using universal decay to detect the electrode,diode  tube type, and performance of low-power transistors is basically applicable to high-power transistors, because the metal shell is known (collector), so the discrimination method is relatively simple.

It should be pointed out that due to the large volume of high-power transistors,diode  the inter electrode resistance is relatively small. If the R × 1k (Ω) range of a multimeter is used to detect the forward resistance between the poles of low-power transistors, it will inevitably cause the ohm pointer to approach zero. This situation is similar to an inter electrode short circuit,diode  making it difficult for the detector to make a judgment. To prevent misjudgment, the R × 1 (Ω) or R × 10 (Ω) range should be used when detecting the forward resistance of the PN junction of high-power transistors.diode