What are the characteristics of Schottky diodes
Schottky diodes are low-power, ultra-high-speed semiconductor devices. Such devices are conducted by a majority of carriers, so their reverse saturation current is much larger than that of a PN junction conducted by a minority carrier. Because the storage effect of a few carriers in a Schottky diode is minimal, its frequency response is only limited by the RC time constant, making it ideal for high frequency and fast switching.
Schottky diode features:
1. Large withstand current: can withstand high inrush current.
2. Low reverse withstand voltage: The general Schottky tube reverse withstand voltage is generally below 200V, generally around 100V, which makes the use limited
3. High temperature resistance: the common Schottky tube zui high junction temperature on the market is divided into 100 °C, 125 °C, 150%, 175 °C (the higher the junction temperature, the better the high temperature resistance characteristics of the product, that is, working below this temperature will not cause failure).
4. Forward voltage drop: The forward voltage drop of Schottky diodes is much lower than that of fast recovery diodes, so their own power consumption is small and their efficiency is high
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