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Which diode has the shorter recovery time, Schottky diode or fast recovery diode?

Schottky diode are very common in electronic applications. The storage effect of minority carriers in Schottky diodes is very small, and the fast reverse recovery time is relatively small.

The size, process, and withstand voltage level of diodes can all affect the conduction voltage drop and reverse recovery time. Large sized diodes typically have high VF and tRR, which can cause significant losses. Switching diodes are generally divided into "high-speed", "very high-speed", and "ultra high-speed" diodes based on speed, and the reverse recovery time decreases with increasing speed. The tRR of fast recovery diode is several hundred nanoseconds, while the tRR of ultra fast recovery diodes is several tens of nanoseconds. In low-power applications, one option to replace fast recovery diodes is Schottky diode. The recovery time of these diodes can be almost ignored, and the reverse recovery voltage VF is only half of that of fast recovery diode (0.4V to 1V). However, the rated voltage and current of Schottky diode are far lower than that of fast recovery diode, making them unsuitable for high-voltage or high-power applications. In addition, Schottky diodes have higher reverse leakage current compared to silicon diodes, but these factors do not limit their application in many power sources.

The recovery time of the fast recovery diode is 250-500ns

The recovery time of the ultra fast recovery diode is 75-250ns

The recovery time of Schottky diode is about 10ns

And their forward conduction voltage is also different, with Schottky<fast recovery<ultra fast recovery diode