Features of MOS tubes with different withstand voltages

Features of MOS diodes with different withstand voltages

MOS transistors with different withstand voltages have different proportions of resistance in each part of their on-resistance. For example, the epitaxial layer resistance of a MOS tube with a withstand voltage of 30V is only 29% of the total on-resistance, and the epitaxial layer resistance of a MOS tube with a withstand voltage of 600V is 96.5% of the total on-resistance.

The difference between different voltage-resistant MOS tubes is mainly that the high-voltage resistant MOS tube reacts slower than the low-voltage MOS tube, therefore, their characteristics also show differences in practical applications, such as medium and low voltage resistant MOS tube only needs a very low gate charge to meet the strong current and high-power processing capacity, in addition to fast switching speed, but also has the characteristics of low switching loss, especially suitable for PWM output mode applications; The high-voltage MOS tube has the characteristics of high input impedance and is widely used in electronic ballasts, electronic transformers and switching power supplies.