Bipolar transistors and FETs comparison
(1) FET is a voltage control device, which controls ID (drain current) through VGS (gate-source voltage);
(2) The current at the control input of the FET is extremely small, so its input resistance (107~1012Ω) is large.
(3) It uses most carriers to conduct electricity, so its temperature stability is better;
(4) The voltage amplification coefficient of the amplification circuit composed of it is less than the voltage amplification coefficient of the amplification circuit composed of the triode;
(5) The FET has strong anti-radiation ability;
(6) Because it does not have the shot noise caused by the diffusion of electrons in chaotic motion, the noise is low.
Contact: Emma Tan
Phone: +8613650089053
E-mail: emma@yfwdiode.com
Add: No.9 Cuibi street,Nancheng,Zhang mutou town,Dongguan City,Guangdong Province
yfwdiode
yfwdiode