SS14 Schottky diode structure and the difference between different models

The Schottky diode structure has a low series resistance and strong nonlinearity, making it suitable for RF circuits.

After some metals come into contact with N-type semiconductor materials, electrons will diffuse from the N-type semiconductor material into the metal, thus forming a depletion layer in the semiconductor material, which has properties similar to conventional PN junctions. This structure, which resembles a PN junction barrier formed by the contact between a metal and a semiconductor material, is called a Schottky junction.

When positive and positive bias voltages are applied (the anode metal is connected to the positive terminal of the power supply, and the N-type substrate is connected to the negative terminal of the power supply), the Schottky barrier layer narrows and the internal resistance decreases. If a reverse bias voltage is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.

The only difference between SS14, SS24 and SS34 is the maximum forward rectification current, which is 1A for SS14, 2A for SS24 and 3A for SS34.

The specific parameters of these three Schottky diodes are as follows:

SS14 Schottky diode

SS14 Schottky diode: maximum reverse peak voltage VRRM = 40V, maximum forward rectification current I (AV) = 1A, maximum forward voltage drop VF = 0.5V, maximum reverse leakage current IR=20mA.

SS24 Schottky diode: maximum reverse peak voltage VRRM = 40V, maximum forward rectification current I (AV) = 2A, maximum forward voltage drop VF = 0.5V, maximum reverse leakage current IR=20mA.

SS34 Schottky diode: maximum reverse peak voltage VRRM = 40V, maximum forward rectification current I (AV) = 3A, maximum forward voltage drop VF = 0.5V, maximum reverse leakage current IR = 20mA.

SS14, SS24, and SS34 are Schottky diodes with a single conductive device. However, its most prominent feature is that the reverse recovery time is very short, so it is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes and protection diodes.