Product model:YFW80P06AF
Package:TO-220F
Brand:YFW
Type:Mosfet
★VDSS:-60V
★Marking code:YFW 80P06AF
★ID:-80A
★VGS:±20V
★IDSS:1uA
★Tr:2.5ns
★Packing quantity:1000/tape
Mosfet
| Characteristics | Test Condition | Symbols | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | BVDSS | -60 | - | - | V |
| VGS=-10V, ID=-18A | - | 13 | 18 | |||
| Static Drain-Source On-Resistance 2 | VGS=-4.5V, ID=-12A | RDS(ON) | - | 29 | 35 | mΩ |
| Gate -Threshold Voltage | VDS=VGS, ID=-250uA | VGS(th) | -1 | 1.8 | -3 | V |
| VDS=-48V , VGS=0V , TJ=25℃ | - | - | 1 | |||
| Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=55℃ | IDSS | - | - | 5 | μA |
| Gate –Source Leakage Current | VGS=±20V, VDS=0V | IGSS | - | - | ±100 | nA |
| Forward Transconductance | VDS=-10V , ID=-18A | gfs | - | 23 | - | S |
| Gate Resistance | VDS=0V , VGS=0V , f=1MHz | Rg | - | 7 | 14 | |
| Total Gate Charge(-4.5V) | Qg | - | 25 | - | ||
| Gate-Source Charge | VDS=-20V VGS=-4.5V ID=-12A | Qgs | - | 6.7 | - | nC |
| Gate-Drain Charge | Qgd | - | 5.5 | - | ||
| Turn-on delay time | td(on) | - | 38 | - | ||
| Rise Time | VDD =-15V VGS=-10V ID= -1A RG=3.3 | Tr | - | 23.6 | - | |
| Turn-Off Delay Time | td(OFF) | - | 100 | - | ns | |
| Fall Time | tf | - | 6.8 | - | ||
| Input Capacitance | Ciss | - | 3635 | - | ||
| Output Capacitance | VDS=-15V VGS=0V | Coss | - | 224 | - | PF |
| Reverse Transfer Capacitance | f=1MHz | Crss | - | 141 | - | |
| Continuous Source Current1.5 | VG=VD=0V , Force Current | IS | - | - | -20 | A |
| Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25℃ | VSD | - | - | -1 | V |
Contact: Emma Tan
Phone: +8613650089053
E-mail: emma@yfwdiode.com
Add: No.9 Cuibi street,Nancheng,Zhang mutou town,Dongguan City,Guangdong Province
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