Product model:YFW80N06AT
Package:TO-220AB
Brand:YFW
Type:Mosfet
★VDSS:60V
★Marking code:YFW 80N06AT
★ID:80A
★VGS:±20V
★IDSS:1uA
★Tr:170ns
★Packing quantity:50/tube
Mosfet
| Characteristics | Test Condition | Symbols | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | V(BR)DSS | 60 | 64 | - | V |
| Zero Gate Voltage Drain Current | VDS=60V , VGS=0V | IDSS | - | - | 1 | μA |
| Gate to Body Leakage Current | VGS=±20V, VDS=0V | IGSS | - | - | ±100 | nA |
| Gate Threshold Voltage | VDS=VGS, ID=250uA | VGS(th) | 2 | 3 | 4 | V |
| Static Drain-Source on-Resistance note | VGS=10V, ID=30A | RDS(ON) | - | 5.8 | 7 | mΩ |
| Input Capacitance | Ciss | - | 4136 | - | ||
| Output Capacitance | VDS=30V VGS=0V f=1.0MHz | Coss | - | 286 | - | PF |
| Reverse Transfer Capacitance | Crss | - | 257 | - | ||
| Total Gate Charge | Qg | - | 90 | - | ||
| Gate-Source Charge | VDS=30V ID=30A VGS=10V | Qgs | - | 9 | - | nC |
| Gate-Drain(“Miller”) Charge | Qgd | - | 18 | - | ||
| Turn-on delay time | td(on) | - | 9 | - | ||
| Turn-on Rise Time | Tr | - | 7 | - | ||
| Turn-Off Delay Time | VDS=30V ,ID=30A RG=1.8Ω, VGS=10V | td(OFF) | - | 40 | - | ns |
| Turn-Off Fall Time | tf | - | 15 | - | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | 90 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | 320 | A | ||
| Drain to Source Diode Forward Voltage | VGS=0V , IS=30A | VSD | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | - | 33 | - | ns | |
| Body Diode Reverse Recovery Charge | IS=30A , dI/dt=100A/µs | Qrr | - | 46 | - | nC |
Contact: Emma Tan
Phone: +8613650089053
E-mail: emma@yfwdiode.com
Add: No.9 Cuibi street,Nancheng,Zhang mutou town,Dongguan City,Guangdong Province
yfwdiode
yfwdiode