Product model:YFW80N10AT
Package:TO-220AB
Brand:YFW
Type:Mosfet
★VDSS:100V
★Marking code:YFW 80N10AT
★ID:80A
★VGS:±20V
★IDSS:1uA
★Tr:5.2ns
★Packing quantity:1000/tape
Mosfet
Characteristics | Symbols | Value | Units |
Drain-Source Voltage | VDS | 100 | V |
Gate - Source Voltage | VGS | ±20 | V |
Continuous Drain Current, VGS @ 10V1 @TC=25℃ | ID | 30 | A |
Continuous Drain Current, VGS @ 10V1@TC=100℃ | ID | 26 | A |
Pulsed Drain Current2 | IDM | 72 | A |
Single Pulse Avalanche Energy3 | EAS | 126 | mJ |
Avalanche Current | IAS | 13 | A |
Total Power Dissipation4 @TC=25℃ | PD | 125 | W |
Storage Temperature Range | TSTG | -55 to +150 | °C |
Operating Junction Temperature Range | TJ, | -55 to +150 | °C |
Thermal Resistance, Junction-to-Ambient 1 | RθJA | 62 | °C/W |
Thermal Resistance Junction-Case1 | RθJC | 1.2 | °C/W |
Contact: Emma Tan
Phone: +8613650089053
E-mail: emma@yfwdiode.com
Add: No.9 Cuibi street,Nancheng,Zhang mutou town,Dongguan City,Guangdong Province