Date:2025-05-28 Categories:Product Subsitution Hits:119 From:Guangdong Youfeng Microelectronics Co., Ltd
Model: MMBT5551DW
Encapsulation: SOT-363
Collector-base voltage BV(cbo): 180V
Collector - emitter voltage BV(ceo): 160V
Transmitter base voltage BV(ebo): 6V
Collecting electrode current IC: 0.6A
DC current gain: VCE=5V IC=1mA hFE=80
VCE=5V IC=10mA hFE=80-250
VCE=5V IC=50mA hFE=30
Collector-emitter saturation voltage: IC=10mA IB=1mA VCE(sat)=0.15V
IC=50mA IB=5mA VCE(sat)=0.2V
Number of pins: 6
Product features: two transistors in one package reduce the number of components and board space
There is no mutual interference between transistors.
Product application: NPN silicon epital plane transistor for high-voltage amplifier applications
Welcome to consult "Youfeng Microelectronics". Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes, low-pressure drop Schottky diodes, silicon carbide diodes, rectifier bridge stackers, fast recovery rectifier bridge stacks, Schottky bridge stackers, TVS transient suppression diodes, ESD electrostatic protection Components, voltage regulator diodes, transistors, controllable silicon thyristors, MOS field effect tubes, etc. For more details, please visit our official website www.yfwdiode.com.
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