What is a fast recovery diode? The basic structure, characteristics, principles, applications, installation, fault analysis, and development history of fast recovery diodes 4

7、 Development history:

The development of fast recovery diodes began in the 1950s, when the demand for high-speed switching devices in the electronics industry was increasing. The initial diodes limited the development of power conversion technology due to their slow switching speed. To overcome this limitation, researchers have begun exploring how to reduce the carrier storage of diodes to improve their switching speed.

In the 1970s, with the advancement of solid-state electronics, fast recovery diodes were significantly improved, and the reverse recovery time was greatly reduced, making them suitable for use in high-frequency applications. These improvements include optimizing the doping level of semiconductors, improving manufacturing processes, and introducing new semiconductor materials.

In the 21st century, with the rapid development of power electronics, the application fields of fast recovery diodes have become more extensive. The introduction of new materials such as silicon carbide (SiC) and gallium nitride (GaN) further enhances the performance of diodes, including shorter recovery time and higher temperature stability. These technological advancements enable fast recovery diodes to operate in more demanding environments, meeting the strict requirements for efficiency and reliability in modern power conversion systems.