How to distinguish between voltage regulator diodes and Schottky diodes?

How to distinguish between voltage regulator diodes and Schottky diodes?

diodes are common in electronic components, and voltage regulator diodes and Schottky diodes are widely used in various industries. In work, we often encounter customers who cannot distinguish between voltage regulator diodes and Schottky diodes. Perhaps they are only purchasing products, not engineering, so it is not surprising that they do not understand the products. So how to distinguish between voltage regulator diodes and Schottky diodes?

Generally, diodes have forward conduction and reverse cutoff; If the reverse voltage applied to the diode exceeds its capacity, the diode will break down and be damaged. A voltage regulator diode is a phenomenon that utilizes the reverse breakdown state of a pn junction, and its current can vary over a large range while the voltage remains basically unchanged. At the breakdown point, the reverse resistance decreases to a very small value, and in this low resistance region, the current increases while the voltage remains constant. The voltage regulator diode is divided according to the breakdown voltage, and because of this characteristic, the voltage regulator is mainly used as a voltage regulator or voltage reference element.

Schottky diodes are semiconductor devices with low power consumption, high current, and ultra high speed. Their specialty is that their switching speed is very fast, the reverse recovery time can be as small as a few nanoseconds, the forward conduction voltage drop is only about 0.4V, and the rectification current can reach several thousand amperes. So suitable for working under low voltage and high current conditions, the output rectifier diode of the computer host power supply uses Schottky diodes.

Schottky diodes is an N-type epitaxial layer formed on an N-type semiconductor substrate using arsenic as a dopant. The positive (barrier) metal material is molybdenum,. Silicon dioxide is used to eliminate the electric field in the edge region and improve the withstand voltage of Schottky diodes. The doping concentration of the N-type substrate is 100 times higher than that of the N-layer, and it has a very small on state resistance. The N+cathode layer at the bottom of the substrate is used to reduce the contact resistance of the cathode. By adjusting structural parameters, a suitable Schottky diode can be formed between the substrate and the anode metal.