How to select FET (04)
The first step in choosing MOS transistor is to determine the switch function of the MOS transistor
There are many parameters for the function of the reaction gate, but the most important ones are the electrode/drain, electrode/source, and drain/source storage capacity. The storage capacity of the department will experience power consumption in the machinery, as they need to be inflated every time the power is turned on. As a result, the progress of MOS transistor switches is increased, and the frequency of the components also decreases. To plan the total consumption of components during the switch process, it is necessary to plan the consumption during the opening process (Eon) and the consumption during the opening process (Eoff). The total power of MOSFET switches can be expressed as the following equation: Psw=(Eon+Eoff) × Switch frequency. The electrode point charge (Qgd) has the greatest response to the gate function.
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