MOS (field effect transistor)

MOS (field effect transistor).

MOS diodee is the abbreviation of MOSFET. MOSFET metal-oxide semiconductor field effect transistor, referred to as metal-oxide half-field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET).

It is generally metal (metal)-oxide (oxide)-semiconductor (semiconductor) field effect transistor, or metal-insulator (insulator)-semiconductor. G:gate gate; S:source source; D:drain drain. The source (source) and drain (depletion layer) of the MOS diodee are interchangeable, and they are both N-shaped regions formed in P-type backgate. In most cases, the two regions are the same, even if the two ends are switched, it will not affect the performance of the device. Such devices are considered to be symmetrical.

FET is divided into PMOS transistor and NMOS transistor, which belongs to insulated gate FET.