Main characteristic parameters of transient suppression diodes

Main characteristic parameters of transient suppression diodes

① Reverse off state voltage (cut-off voltage) VRWM and reverse leakage current IR: Reverse off state voltage (cut-off voltage) VRWM represents the highest voltage at which the TVS transistor is not conducting, with only a small reverse leakage current IR at this voltage.

② Breakdown voltage VBR: The voltage at which the TVS tube passes the specified test current IT, which is the flag voltage indicating the conduction of the TVS diodes (the numbers in the P4SMA, P6SMB, 1.5SMC, P4KE, P6KE, and 1.5KE series models are the nominal values of the breakdown voltage, while the numbers in other series are the reverse off state voltage values). The breakdown voltage of TVS diode has an error range of ± 5% (± 10% without "A").

③ Pulse peak current IPP: 10/1000 allowed for TVS diode μ Maximum peak current of s-wave (8/20 μ The peak current of the s-wave is about 5 times its value, and exceeding this current value may cause permanent damage. In the same series, the higher the breakdown voltage, the smaller the peak current allowed to pass through the diode.

④ Maximum clamping voltage VC: The voltage present at both ends of a TVS transistor when it flows through a pulse peak current IPP.

⑤ Pulse peak power Pm: Pulse peak power Pm refers to 10/1000 μ The product of the peak pulse current IPP of the s-wave and the maximum clamping voltage VC, i.e. Pm=IPP * VC.