Do you know the characteristics and applications of Schottky diodes?

What are the characteristics of Schottky diode products, and what is the principle of Schottky diode application?

Schottky diodes are different from ordinary PN junction diodes in that they use N-type semiconductor materials to combine with metals to form metal-semiconductor junctions. Schottky diodes have the advantages of forward voltage drop and short reverse charge recovery time (less than 10ns) compared to ordinary diodes. It is mainly suitable for high-frequency, high-current, low-voltage rectifier circuits, microwave electronic mixing circuits, detection circuits, high-frequency digital logic circuits, etc.

1. Schottky product features:

1. The forward voltage drop of Schottky diodes is much lower than that of fast recovery diodes, so its own power consumption is small and the efficiency is high.

2. Due to the extremely short recovery time of the reverse charge, it is suitable for working in the high-frequency state.

3. Able to withstand high inrush current.

4. In the past, the reverse withstand voltage of Schottky diode was generally below 200V, but now the latest technology can achieve products up to 1000V, and the market application prospect is very broad.

5. At present, the maximum junction temperature of Schottky diodes on the market is 100 °C, 125 °C, 150% and 175 °C (the higher the junction temperature, the better the high temperature resistance of the product.) i.e. operating below this temperature will not cause failure).

2. Attention to the application of Schottky products:

1. It should be less than the forward rated current IF of the Schottky diode.

2. The peak operating voltage of the application circuit should be less than the highest reverse breakdown voltage of the Schottky diode, Vrrm.

3. The actual operating temperature rise of the Schottky diode in the application circuit should be less than the maximum junction temperature Tjmax of the Schottky diode.

4. For more harsh environments, in order to ensure reliability, Schottky diode should be derated.

5. For the application circuit with large surge voltage or surge current, suppression and absorption circuits should be added.

6. The replacement of Schottky diodes should be used as far as possible to choose the original model, because different models of Schottky forward voltage drop VF, reverse breakdown voltage VR, and reverse leakage current IR are different.