Which recovery time is shorter, Schottky diode or fast recovery diode?

Which recovery time is shorter, Schottky diode or fast recovery diode?

Schottky diodes are very common in electronic applications. The storage effect of minority carriers in Schottky diodes is very small, and the reverse recovery time is relatively small.

The size, process and withstand voltage level of the diode will affect the on-voltage drop and reverse recovery time. Large size diodes usually have higher VF and tRR, which will cause relatively large losses. Switching diodes are generally divided into "high speed","very high speed" and "ultra-high speed" diodes, and the reverse recovery time decreases as the speed increases. The tRR of fast recovery diodes is several hundred nanoseconds, while the tRR of ultra-high-speed fast recovery diodes is tens of nanoseconds. In low-power applications, one alternative to fast recovery diodes is Schottky diodes, which have almost negligible recovery time and only half the reverse recovery voltage VF (0.4V to 1V) of fast recovery diodes. However, Schottky diodes have a voltage and current rating far lower than fast recovery diodes and cannot be used for high-voltage or high-power applications. In addition, Schottky diodes have higher reverse leakage current than silicon diodes, but these factors do not limit their application in many power supplies.

The recovery time of the fast recovery diode is 250-500ns

The recovery time of the ultra-fast recovery diode is 75-250ns

The recovery time of the Schottky diode is about 10ns

And their forward turn-on voltages are also different, Schottky <fast recovery <ultra-fast recovery diodes