How do fast recovery diodes achieve rectification?

How do fast recovery diodes achieve rectification?
Fast recovery diodes are generally used for higher frequency rectifiers and bai continuous currents. As for the input part of the power supply module, it seems that the frequency is not high, there is no need to use fast recovery diodes, ordinary diodes can be used, but you can also use it to rectify in the power supply circuit.
The fast recovery diode is divided into a single diodee (ordinary two-pin) and a pair of diodees (3-pin). There are two fast recovery diodes inside the pair of diodes, which can be divided into common yin pair and common yang pair according to the different connection methods of the two diodes. When using it for the whole bridge, you have to prepare two pairs of diodees, one for yin and one for yang, and the current should be equal, so you have to measure whether the removed diodees are co-yin or co-yang. It is best to check their relevant parameters such as reverse voltage, rated current and so on. General power amplifiers require a relatively large power supply current, so you must check the rated current of the original ordinary diode to see if the replacement fast recovery diode is suitable. Compared with the ordinary bridge stack, it has no obvious advantages in the power supply circuit.
Fast recovery rectifier diodes belong to high frequency rectifier diodes in rectifier diodes, so they are called fast recovery diodes because ordinary rectifier diodes generally work at low frequency (such as 50Hz) and their working frequency is lower than 3kHz.
Rectifier diode (rectifier diode) is a semiconductor device used to convert alternating current into direct current. The most important characteristic of diodes is unidirectional conductivity. In the circuit, the current can only flow in from the positive pole of the diode and out from the negative pole. It usually contains a PN junction with positive and negative terminals. Its structure is shown in the figure. The carriers in P region are holes and the carriers in N region are electrons, which form a certain potential barrier in P region and N region. When the voltage that makes the P region positive relative to the N region is added, the potential barrier decreases, and storage carriers are produced near both sides of the barrier, which can pass through large current and have a low voltage drop (typical value is 0.7V), which is called forward conduction state. If the opposite voltage is added to increase the barrier, it can withstand a high reverse voltage and flow through a very small reverse current (called reverse leakage current), which is called reverse blocking state. The rectifier diode has obvious unidirectional conductivity.