​Characteristics of MOS Field-effect transistor

Characteristics of MOS Field-effect transistor

Field-effect transistor has the following characteristics, compared with bipolar transistors.

(1) Field-effect transistor is a voltage control device, which controls ID (drain current) through VGS (gate source voltage);

(2) The control input current of Field-effect transistor is very small, so its input resistance (107~1012 Ω) is very large.

(3) It utilizes most charge carriers to conduct electricity, so its temperature stability is good;

(4) The voltage amplification coefficient of the amplification circuit composed of it is smaller than the voltage amplification coefficient of the amplification circuit composed of the transistor;

(5) Field-effect transistor has strong radiation resistance;

(6) The noise is low because there is no Shot noise caused by the disorderly movement of electronic diffusion.