Which one has the shorter recovery time, Schottky or Fast Recovery Diode?

Which one has the shorter recovery time, Schottky or Fast Recovery Diode?

 Schottky is a barrier diode formed at the end of metal and semiconductor. It is conductive with most carriers. Its reverse phase Saturation current is much larger than the PN junction of the fast recovery diode conductive with a few carriers. Moreover, the storage effect of a few carriers is very small, and the reverse recovery time is certainly much smaller than the fast recovery diode.

The size, process, and withstand voltage level of diodes can all affect the conduction voltage drop and reverse recovery time. Large sized diodes typically have high VF and tRR, which can cause significant losses. Switching diodes are generally divided into "high-speed", "very high-speed", and "ultra high-speed" diodes based on speed, and the reverse recovery time decreases with increasing speed. The tRR of fast Fast Recovery Diode is several hundred nanoseconds, while the tRR of ultra fast recovery https://www.yfwmos.com/search/index.html?name=diodes is several tens of nanoseconds.

In low-power applications, one option to replace Fast Recovery Diode is Schottky diodes. The recovery time of these diodes can be almost ignored, and the reverse recovery voltage VF is only half of that of fast recovery diodes (0.4V to 1V). However, the rated voltage and current of Schottky diodes are far lower than that of fast Fast Recovery Diode making them unsuitable for high-voltage or high-power applications. In addition, Schottky diodeshave higher reverse leakage current compared to silicon https://www.yfwmos.com/search/index.html?name=diodes, but these factors do not limit their application in many power sources.

The recovery time of the Fast Recovery Diode is 250-500ns

The recovery time of the ultra Fast Recovery Diode is 75-250ns

The recovery time of Schottky diode is about 10ns

And their forward conduction voltage also varies.

Schottky diode is a Schottky barrier diode based on the barrier formed by the contact between metal and semiconductor, which is called Schottky diode for short. Schottky diodes are low-power, ultra fast semiconductor devices, with reverse recovery times as small as a few nanoseconds (2-10ns nanoseconds) and forward voltage drops of only about 0.4V (0.4-1.0V), while the rectification current can reach several thousand amperes. Moreover, the reverse leakage current is relatively large, with low withstand voltage, generally lower than 150V, and is mostly used in low voltage situations.