TVS Diode Glossary

TVS Diode Glossary

Electric Skid Equipment

TVS Diode This type of suppressor has the characteristic of "electric pry" and is usually related to 4-layer NPNP silicon controlled bipolar devices or plasma gas/GDT devices. Once the threshold or turning point voltage is reached, further increase in current will cause the device to conduct quickly, with a forward voltage drop of only a few volts. In essence, the line will be in a temporary "short circuit" state when transient phenomena occur.

Operating temperature range

The application circuit of the device and the ambient operating temperature. The working temperature should not affect adjacent components, which is a parameter that designers must consider.

Capacitance

 TVS Diode The property of a circuit component that allows it to store charges. In circuit protection, the off state capacitance is usually measured at a frequency of 1 MHz and a bias voltage of 2 V.

Reverse off state voltage (VR)

For unidirectional transient suppression diodes, this is the peak voltage that can be used for blocking direction without large current. For bidirectional transients, it is suitable for any direction. Its meaning is the same as the off state voltage and working voltage.

Breakdown voltage (VBR)

The breakdown voltage measured at the specified DC test current is usually 1mA. Usually, it is explained with the value.

Peak pulse current (IPP)

Repeatable pulse current application. If explained, it can usually be 10x1000 μ Double exponential waveform, which can also be 8x20 μ S.

Clamping voltage (VC or VCI)

TVS Diode The voltage that can be measured from the protector when peak pulse current occurs.

Peak Pulsed power (PPP)

Expressed in watts or kilowatts, the 1ms exponential transient value is the product of IPP and VCL.