Which one has the shorter recovery time, a Schottky diode or a fast recovery diode?

Schottky is a barrier diode formed by the end of metal and semiconductor. It conducts conduction with majority carriers, and its reverse saturation current is much larger than the PN junction of fast recovery diodes that conduct conduction with minority carriers, and the minority carriers The storage effect is very small, and the reverse recovery time is faster and the recovery is of course much smaller.

     The size, process and withstand voltage level of the diode will all affect the turn-on voltage drop and reverse recovery time. Large-sized diodes usually have higher VF and tRR, which will cause relatively large losses. Switching diodes are generally categorized by speed as "high-speed", "very high-speed" and "ultra-high-speed" diodes, with reverse recovery times decreasing as speed increases. The tRR of the fast recovery diode is hundreds of nanoseconds, while the tRR of the ultra-high speed fast recovery diode is tens of nanoseconds.

     In low power consumption applications, one option to replace the fast recovery diode is the Schottky diode, the recovery time of this diode is almost negligible, and the reverse recovery voltage VF is only half of the fast recovery diode (0.4V to 1V), but Schottky diodes have far lower voltage and current ratings than fast recovery diodes and cannot be used in high voltage or high power applications. Additionally, Schottky diodes have a higher reverse leakage current than silicon diodes, but these factors do not limit their use in many power supplies.

     The recovery time of the fast recovery diode is 250-500ns

     The recovery time of the ultra-fast recovery diode is 75-250ns

     The recovery time of Schottky diode is about 10ns

     And their forward voltages are also different.

     Schottky diodes are Schottky barrier diodes based on the barrier formed by metal and semiconductor contacts, referred to as Schottky diodes. Schottky diodes are low-power, ultra-high-speed semiconductor devices, their reverse recovery time can be as small as a few nanoseconds (2-10ns nanoseconds), and the forward voltage drop is only about 0.4v (0.4--1.0V). However, the rectified current can reach several thousand amps. Moreover, the reverse leakage current is large, and the withstand voltage is low, generally lower than 150V, and it is mostly used in low-voltage occasions.