What are the differences between diodes

What are the differences between diodes

There are many different classifications of diodes, each with different functions and differences between them. It is important to choose the appropriate product based on its different characteristics.

1. Rectifier diode

In principle, the direct current obtained from the input AC is a rectification. The output current greater than 100mA is usually referred to as rectification based on the magnitude of the rectification current (100mA) as the boundary.

2. Limiting diode

After the diode conducts in the forward direction, its forward voltage drop remains basically unchanged (0.7V for silicon tubes). By utilizing this feature as a limiting element in the circuit, the signal amplitude can be limited to a certain range. Most diodes can be used as limiting devices. There are also specialized limiting diodes for protecting instruments, such as high-frequency Zener tubes. In order to give these diodes a particularly strong limiting effect on sharp amplitudes, diodes made of silicon materials are usually used.

3. Switching diode

Under the action of forward voltage, the resistance is very small and in a conductive state, equivalent to a connected switch; Under the action of reverse voltage, the resistance is large and in a cut-off state, like a disconnected switch. By utilizing the switching characteristics of diodes, various logic circuits can be formed.

4. Zener diode

It is made by utilizing the reverse breakdown characteristics of a diode, and the voltage at both ends of the circuit remains basically unchanged, playing a stabilizing role in voltage. It is a product that replaces a voltage stabilizing electronic diode. The diode, which is made into a diffusion type or alloy type of silicon and has a sudden change in reverse breakdown characteristic curve, is made for use as a control voltage and standard voltage.

5. Schottky diode

A diode with a "metal semiconductor junction" with Schottky characteristics. Its forward starting voltage is relatively low. In addition to materials, the metal layer can also be made of materials such as gold, molybdenum, nickel, and titanium. Its semiconductor material is silicon or gallium arsenide, mostly N-type semiconductor. This device is conductive by most carriers, so its reverse Saturation current is much larger than that of PN junction conductive by a few carriers. Due to the minimal storage effect of minority carriers in Schottky diodes, their frequency response is only limited by the RC time constant, making them ideal devices for high-frequency and fast switching.

6. Transient voltage suppression diode

It can provide fast overvoltage protection for circuits, divided into two types: bipolar and unipolar.